Method for Making Aluminum Single Crystal Interconnections On Insulators > 자유게시판

FIG. 7B exhibits that a bent portion of wiring 20 is bent in an angle of 60 and one hundred twenty levels. FIG. 7A exhibits that a bent portion of wiring 20 is bent in an angle of 120 levels. Identifying each crystal aspect from an angle thereof, the respective crystal aspects have been discovered as proven in FIG. 14. Moreover, by observing the cross sections of different crystal seeds, it was learned that a cross sectional form determined by the crystal facet was equal and the in-aircraft orientation of the crystal seed was controlled within the floor thereof so as to indicate the same orientation. According to still one other facet of the present invention, there's supplied a method of producing a semiconductor device comprising the steps of: forming a groove having a predetermined pattern form on the floor of a substrate; forming a primary metallic skinny film on the substrate; agglomerating the first metal film by annealing so as to fill the primary metallic into not less than a portion of the groove whereas formation of a local oxide film thereon is suppressed; forming a second metal thin movie made of a identical material as the first metal skinny movie, on the substrate with agglomerated first thin film; and patterning the primary and second thin movies.

In the same figure, the vertical axis thereof signifies an X-ray depth, so that the greater the depth turns into the better the crystallization thereof is. Ar was the fuel that was utilized in the sputtering, the background strain was lower than 10.sup.-Eight Torr, the pressure through the sputtering was 3.instances.10.sup.-3 Torr, and the utilized energy was 6 KW, in order to type the Al film while suppressing the formation of the native oxide film on the Al surface. By this fact, it's clearly indicated that the additional most well-liked orientation is effected in a method where the first Al movie is separated in order to type a crystal seed (though not shown) and the second Al movie is grown based mostly on the crystal seed. As for materials akin to Cu and Ag which have a lower resistance than Al-containing material, Aluminum single wire it is tough to kind a compound having a high vapor pressure. In view of the foregoing problems, an object of the current invention is to supply an electrode interconnection by which a preferred orientation regular to the substrate is additional improved, and an in-plane rotation of crystal grains in substrate face is suppressed so as to have an excellent endurance towards stressmigration and electromigration.

However, when used because the plug is the different metallic from the upper and/or decrease interconnections, an interconnection steel atom transferred because of the electromigration and stressmigration phenomena is hindered from the switch thereof on account of the plug. In a single facet of the present invention, there's provided a technique for making single-crystal aluminum interconnection, the strategy contains the steps of forming a groove having a predetermined sample shape on the surface of a substrate; forming a steel movie on the substrate whereas response with the surface of the substrate is suppressed; and agglomerating the metal film by in-situ annealing, whereby agglomeration of the steel movie is started before the metallic film reacts with the surface of the substrate as a result of annealing, while formation of a local oxide on the metal movie is suppressed, and whereby the steel film is crammed into the groove by annealing at a predetermined temperature for a predetermined period of time.

According to a different facet of the current invention, there may be supplied a method of producing a semiconductor device comprising the steps of: forming a groove having a predetermined pattern form on the floor of a substrate; forming a metallic movie on the substrate; selectively removing the metal movie formed in an space aside from the groove; removing a native oxide film formed on the steel film; and agglomerating the metallic film by annealing in an vacuum ambiance in order to fill in the metallic movie into the groove whereas re-formation of the native oxide film is suppressed. Moreover, so as to improve the step protection on the time of Al movie formation by sputtering, groove shapes comparable to in FIG. 42A-42C may serve the purpose and be carried out to the primary by tenth embodiments. In contrast thereto, the strategy through which the Al is stuffed into the groove of the interlayer insulator realizes that the stress is dispersed as described in the sixth and eighth embodiments Consequently, there's realized the electrode wiring construction by which the crystal grain boundaries don't happen in the bending portion or wiring connecting portion. Still one other object thereof is to offer an electrode wiring construction by which there stays no mechanical stress, a contact resistance is lowered, and a heat radiating effect is improved.